Samsung begins 512GB storage chip production for smartphones

Taking mobile device storage solution to a new level, Samsung Electronics has announced that it has begun mass production of the industry's first 512GB eUFS (embedded Universal Flash Storage). The storage chip utilizes Samsung's 64-layer 512-gigabit (Gb) V-NAND chips to provide unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.

The 512GB eUFS consists of eight 64-layer 512Gb V-NAND chips and a controller chip,. which are stacked together. It also doubles the density of the previous 48-layer V-NAND-based 256GB eUFS in the same space as the 256GB package. 

For instance, the new 512GB eUFS enables a device to store approximately 130 4K Ultra HD (3840 x 2160 px) video clips of 10 minute duration, compared to 13. For comparison, a 64GB chip can hold only 13 of the same-sized video clips. For reference, the Galaxy S8 and Note8 comes with 64GB internal storage.

As for the performance, Samsung's 512Gb eUFS offers strong rear and write speeds. It has read speeds of up to 860MB/s and write speeds of 255MB/s. To transfer a 5GB Full HD video clip to an SSD, it will take about six seconds, which is over eight time faster than a typical microSD card. 

It also has a random read speed of 42,000 input/output operations per second (IOPS) and a write speed of 40,000 IOPS, which is over 400 times faster than a regular microSD card.

With this, mobile users can enjoy seamless multimedia experiences such as high-resolution burst shooting, as well as file searching and video downloading in dual-app viewing mode. 

Samsung said that it will steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production to meet the demand for advanced embedded mobile storage. 

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